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PMN70EPE PDF预览

PMN70EPE

更新时间: 2024-11-22 11:13:35
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
15页 265K
描述
30 V, P-channel Trench MOSFETProduction

PMN70EPE 数据手册

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PMN70EPE  
30 V, P-channel Trench MOSFET  
23 May 2017  
Product data sheet  
1. General description  
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-  
Mounted Device (SMD) plastic package using Trench MOSFET technology.  
2. Features and benefits  
Trench MOSFET technology  
Logic-level compatible  
Very fast switching  
Enhanced power dissipation capability of 1.4 W  
ElectroStatic Discharge (ESD) protection > 2 kV HBM  
3. Applications  
Relay driver  
High-speed line driver  
High-side loadswitch  
Switching circuits  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Typ  
Max  
-30  
20  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
VGS  
-20  
-
V
ID  
VGS = -10 V; Tamb = 25 °C; t ≤ 5 s  
VGS = -10 V; ID = -3.3 A; Tj = 25 °C  
[1]  
-4.4  
A
Static characteristics  
RDSon drain-source on-state  
resistance  
-
60  
80  
mΩ  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.  
 
 
 
 
 

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