Datasheet > PMN38EN,165

PMN38EN,165

更新时间： 2024-11-21 21:17:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	178K
描述
PMN38EN - N-channel TrenchMOS logic level FET TSOP 6-Pin

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技术参数
数据手册

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PMN38EN,165 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TSOP
针数：	6	Reach Compliance Code：	unknown
风险等级：	5.71	Base Number Matches：	1

PMN38EN,165 数据手册

PMN38EN

N-channel TrenchMOS logic level FET

Rev. 02 — 3 October 2007

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package. This product is designed and qualified for use in computing, communications,

consumer and industrial applications only.

1.2 Features

Logic level threshold

Surface-mounted package

Low threshold voltage

Very fast switching

1.3 Applications

Battery powered motor control

Driver FET in DC-to-DC converters

High speed switch in set top box power Load switch in notebook computers

supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min Typ Max Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 150 °C

T_sp= 25 °C; V_GS= 10 V;

5.4

see Figure 1 and 3

P_tot

total power dissipation T_sp= 25 °C; see Figure 2

1.75

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 4.5 V; I_D= 2.8 A;

T_j= 25 °C; see Figure 8 and 9

mΩ

12 3 4 5 6 7...12

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