Datasheet > PMN30UNE

PMN30UNE

更新时间： 2024-11-26 11:15:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
16页	726K
描述
20 V, N-channel Trench MOSFETProduction

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PMN30UNE 数据手册

PMN30UNE

20 V, N-channel Trench MOSFET

29 January 2016

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

Trench MOSFET technology

Low threshold voltage

Very fast switching

Enhanced power dissipation capability of 1240 mW

ElectroStatic Discharge (ESD) protection > 1 kV HBM

•

3. Applications

LED driver

•

Power management

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-8

V_GS= 4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 4.5 V; I_D= 4.8 A; T_j= 25 °C

[1]

Static characteristics

R_DSondrain-source on-state

mΩ

resistance

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm².

[1]

12 3 4 5 6 7...16

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