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PMN34UP PDF预览

PMN34UP

更新时间: 2024-11-21 19:55:07
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
15页 801K
描述
5000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-74, TSOP-6

PMN34UP 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-74包装说明:PLASTIC, SC-74, TSOP-6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.67
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):5 A最大漏源导通电阻:0.04 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:PURE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PMN34UP 数据手册

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PMN34UP  
T457  
SO  
20 V, 5 A P-channel Trench MOSFET  
Rev. 1 — 9 May 2011  
Product data sheet  
1. Product profile  
1.1 General description  
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)  
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.  
1.2 Features and benefits  
1.8 V RDSon rated  
Very fast switching  
Trench MOSFET technology  
1.3 Applications  
Relay driver  
High-side loadswitch  
Switching circuits  
High-speed line driver  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
-20  
8
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
VGS  
-8  
-
V
[1]  
ID  
VGS = -4.5 V; Tamb = 25 °C  
-5  
A
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C  
-
34  
40  
m  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.  
2. Pinning information  
Table 2.  
Pinning information  
Symbol Description  
Pin  
1
Simplified outline  
Graphic symbol  
D
D
G
S
D
D
drain  
drain  
gate  
D
6
5
4
3
2
3
G
4
source  
drain  
drain  
1
2
S
5
SOT457 (TSOP6)  
017aaa094  
6
 
 
 
 
 
 
 

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