Datasheet > PMN30XP

PMN30XP

更新时间： 2024-11-26 11:10:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
16页	731K
描述
20 V, P-channel Trench MOSFETProduction

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PMN30XP 数据手册

PMN30XP

20 V, P-channel Trench MOSFET

23 February 2016

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

Trench MOSFET technology

Low threshold voltage

Enhanced power dissipation capability of 1400 mW

•

3. Applications

Relay driver

•

High-speed line driver

High-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

-20

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-12

V_GS= -4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= -4.5 V; I_D= -5.2 A; T_j= 25 °C

[1]

-6.8

Static characteristics

R_DSondrain-source on-state

mΩ

resistance

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm².

[1]

12 3 4 5 6 7...16

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