是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.60 |
风险等级: | 5.72 | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
最大二极管电容: | 1 pF | 二极管元件材料: | SILICON |
二极管类型: | MIXER DIODE | 频带: | ULTRA HIGH FREQUENCY |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 3 |
最高工作温度: | 100 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 参考标准: | IEC-60134 |
表面贴装: | YES | 技术: | SCHOTTKY |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBD354,215 | NXP |
获取价格 |
PMBD354 - Schottky barrier double diode TO-236 3-Pin | |
PMBD6050 | NXP |
获取价格 |
High-speed diode | |
PMBD6050 | NEXPERIA |
获取价格 |
High-speed diodeProduction | |
PMBD6050,215 | NXP |
获取价格 |
High-speed diode | |
PMBD6050,235 | NXP |
获取价格 |
PMBD6050 - High-speed diode TO-236 3-Pin | |
PMBD6050/T3 | NXP |
获取价格 |
0.215A, 85V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3 | |
PMBD6050-T | NXP |
获取价格 |
0.215A, 85V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3 | |
PMBD6050T/R | NXP |
获取价格 |
0.215A, 85V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3 | |
PMBD6100 | NEXPERIA |
获取价格 |
High-speed double diodeProduction | |
PMBD6100 | NXP |
获取价格 |
High-speed double diode |