生命周期: | Active | 零件包装代码: | TO-236 |
包装说明: | R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.70 | Factory Lead Time: | 4 weeks |
风险等级: | 0.94 | 配置: | COMMON CATHODE, 2 ELEMENTS |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 3 |
最高工作温度: | 150 °C | 最大输出电流: | 0.215 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
最大功率耗散: | 0.25 W | 最大重复峰值反向电压: | 85 V |
最大反向恢复时间: | 0.004 µs | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBD6100212 | NXP |
获取价格 |
DIODE 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode | |
PMBD6100-T | NXP |
获取价格 |
DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal | |
PMBD6100T/R | NXP |
获取价格 |
DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal | |
PMBD7000 | NXP |
获取价格 |
High-speed double diode | |
PMBD7000 | NEXPERIA |
获取价格 |
Double high-speed switching diodeProduction | |
PMBD7000212 | NXP |
获取价格 |
100V, 2 ELEMENT, SILICON, SIGNAL DIODE | |
PMBD7000-215 | NXP |
获取价格 |
Double high-speed switching diode | |
PMBD7000-T | NXP |
获取价格 |
暂无描述 | |
PMBD7000T/R | NXP |
获取价格 |
0.215A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3 | |
PMBD7100 | NEXPERIA |
获取价格 |
High-speed double diodeProduction |