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PKN3002 PDF预览

PKN3002

更新时间: 2024-11-15 01:24:19
品牌 Logo 应用领域
PACELEADER /
页数 文件大小 规格书
5页 1335K
描述
N-Ch 30V Fast Switching MOSFETs

PKN3002 数据手册

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PKN3002  
N-Ch 30V Fast Switching MOSFETs  
Green Device Available  
Super Low Gate Charge  
Excellent Cdv/dt effect decline  
Advanced high cell density Trench  
technology  
Product Summary  
BVDSS  
RDSON  
ID  
30V  
28mΩ  
5A  
Description  
SOT23 Pin Configuration  
The PKN3002 is the high cell density trenched  
N-ch MOSFETs, which provides excellent RDSON  
and efficiency for most of the small power  
switching and load switch applications.  
The PKN3002 meet the RoHS and Green Product  
requirement with full function reliability approved.  
Absolute Maximum Ratings  
Rating  
Symbol  
Parameter  
Units  
10s  
Steady State  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
V
V
±20  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current, VGS @ 10V1  
Continuous Drain Current, VGS @ 10V1  
Pulsed Drain Current2  
5.8  
4.6  
5
4
A
A
25  
A
PD@TA=25℃  
PD@TA=70℃  
TSTG  
Total Power Dissipation3  
Total Power Dissipation3  
1.32  
0.84  
1
W
W
0.64  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
RθJA  
Parameter  
Typ.  
---  
Max.  
Unit  
/W  
/W  
/W  
Thermal Resistance Junction-ambient 1  
Thermal Resistance Junction-Ambient 1 (t 10s)  
Thermal Resistance Junction-Case1  
125  
95  
RθJA  
---  
RθJC  
---  
80  
1
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