Datasheet > PKN6008

PKN6008

更新时间： 2024-11-15 01:24:19

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PACELEADER		/
页数	文件大小	规格书
5页	1321K
描述
N-Ch 60V Fast Switching MOSFETs

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PKN6008 数据手册

PKN6008

N-Ch 60V Fast Switching MOSFETs

 Green Device Available

 Super Low Gate Charge

 Excellent CdV/dt effect decline

 Advanced high cell density Trench

technology

Product Summary

BVDSS

RDSON

60V

100mΩ

2.3A

SOT23 Pin Configuration

Description

The PKN6008 is the high cell density trenched

N-ch MOSFETs, which provides excellent RDSON

and efficiency for most of the small power

switching and load switch applications.

The PKN6008 meet the RoHS and Green Product

requirement with full function reliability approved.

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Rating

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current, V_GS@ 10V¹

Pulsed Drain Current²

2.3

1.8

9.2

P_D@T_A=25℃

T_STG

Total Power Dissipation³

℃

Storage Temperature Range

-55 to 150

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

R_θJA

Parameter

Typ.

---

Max.

125

Unit

℃/W

Thermal Resistance Junction-Ambient ¹

Thermal Resistance Junction-Case¹

R_θJC

---

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