Datasheet > PKQ6208

PKQ6208

更新时间： 2024-11-15 01:25:19

品牌	Logo	应用领域
PACELEADER		/
页数	文件大小	规格书
5页	1519K
描述
Dual N-Ch 60V Fast Switching MOSFETs

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PKQ6208 数据手册

PKQ6208

Dual N-Ch 60V Fast Switching MOSFETs

 Green Device Available

 Super Low Gate Charge

Product Summary

 Excellent CdV/dt effect decline

 Advanced high cell density Trench technology

BVDSS

RDSON

60V

100mΩ

2.5A

Description

TSOP6 Pin Configuration

The PKQ6208 is the high cell density trenched

N-ch MOSFETs, which provide excellent RDSON

and gate charge for most of the synchronous buck

converter applications.

The PKQ6208 meet the RoHS and Green Product

requirement with full function reliability approved.

Absolute Maximum Ratings

Rating

Symbol

Parameter

Units

10s

Steady State

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current, V_GS@ 10V¹

Pulsed Drain Current²

2.8

2.2

2.5

P_D@T_A=25℃

T_STG

Total Power Dissipation³

1.5

1.1

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

R_θJA

Parameter

Typ.

---

Max.

Unit

℃/W

Thermal Resistance Junction-Ambient ¹

Thermal Resistance Junction-Ambient ¹(t ≤10s)

Thermal Resistance Junction-Case¹

110

R_θJA

---

R_θJC

---

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