Datasheet > PKQ2510

PKQ2510

更新时间： 2024-11-15 01:24:19

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PACELEADER		/
页数	文件大小	规格书
5页	3062K
描述
N-Ch 20V Fast Switching MOSFETs

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PKQ2510 数据手册

PKQ2510

N-Ch 20V Fast Switching MOSFETs

Product Summary

 Green Device Available

 Super Low Gate Charge

 Excellent Cdv/dt effect decline

 Advanced high cell density Trench

technology

BVDSS

RDSON

20V

37mΩ

4.5A

Description

TSOP6 Pin Configuration

The PKQ2510 is the high cell density trenched

N-ch MOSFETs, which provides excellent RDSON

and efficiency for most of the small power

switching and load switch applications

The PKQ2510 meet the RoHS and Green Product

requirement with full function reliability approved.

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Rating

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current, V_GS@ 4.5V¹

Pulsed Drain Current²

4.5

3.6

P_D@T_A=25℃

T_STG

Total Power Dissipation³

1.1

℃

Storage Temperature Range

-55 to 150

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

R_θJA

Parameter

Typ.

---

Max.

110

Unit

℃/W

Thermal Resistance Junction-ambient ¹

Thermal Resistance Junction-Case¹

R_θJC

---

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