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PKQ3002 PDF预览

PKQ3002

更新时间: 2024-11-15 01:25:19
品牌 Logo 应用领域
PACELEADER /
页数 文件大小 规格书
5页 1486K
描述
N-Ch 30V Fast Switching MOSFETs

PKQ3002 数据手册

 浏览型号PKQ3002的Datasheet PDF文件第2页浏览型号PKQ3002的Datasheet PDF文件第3页浏览型号PKQ3002的Datasheet PDF文件第4页浏览型号PKQ3002的Datasheet PDF文件第5页 
PKQ3002  
N-Ch 30V Fast Switching MOSFETs  
Green Device Available  
Super Low Gate Charge  
Excellent Cdv/dt effect decline  
Advanced high cell density Trench  
technology  
Product Summary  
BVDSS  
RDSON  
ID  
30V  
28mΩ  
5A  
Description  
TSOP6 Pin Configuration  
The PKQ3002 is the high cell density trenched  
N-ch MOSFETs, which provides excellent RDSON  
and efficiency for most of the small power  
switching and load switch applications.  
The PKQ3002 meet the RoHS and Green Product  
requirement with full function reliability approved.  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Rating  
30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current, VGS @ 10V1  
Continuous Drain Current, VGS @ 10V1  
Pulsed Drain Current2  
5
4
A
A
10  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation3  
1.1  
W
Storage Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
RθJA  
Parameter  
Typ.  
---  
Max.  
110  
70  
Unit  
/W  
/W  
Thermal Resistance Junction-ambient1  
Thermal Resistance Junction-Case1  
RθJC  
---  
1
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