Datasheet > PKN3107

PKN3107

更新时间： 2024-11-15 01:24:19

品牌	Logo	应用领域
PACELEADER		/
页数	文件大小	规格书
5页	1336K
描述
P-Ch 30V Fast Switching MOSFETs

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PKN3107 数据手册

PKN3107

P-Ch 30V Fast Switching MOSFETs

 Green Device Available

 Super Low Gate Charge

 Excellent CdV/dt effect decline

 Advanced high cell density Trench

technology

Product Summary

BVDSS

RDSON

-30V

70mΩ

-3.2A

Description

SOT23 Pin Configuration

The PKN3107 is the high cell density trenched

P-ch MOSFETs, which provides excellent RDSON

and efficiency for most of the small power

switching and load switch applications.

The PKN3107 meet the RoHS and Green Product

requirement with full function reliability approved.

Absolute Maximum Ratings

Rating

Symbol

Parameter

Units

10s

Steady State

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

-30

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current, V_GS@ -10V¹

Pulsed Drain Current²

-3.6

-2.9

-3.2

-2.5

-13

P_D@T_A=25℃

P_D@T_A=70℃

T_STG

Total Power Dissipation³

1.32

0.84

℃

Total Power Dissipation³

0.64

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

R_θJA

Parameter

Typ.

---

Max.

Unit

℃/W

Thermal Resistance Junction-ambient ¹

Thermal Resistance Junction-Ambient ¹(t ≤10s)

Thermal Resistance Junction-Case¹

125

R_θJA

---

R_θJC

---

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