Datasheet > PKN3601

PKN3601

更新时间： 2024-11-15 01:24:19

品牌	Logo	应用领域
PACELEADER		/
页数	文件大小	规格书
5页	1375K
描述
P-Ch 30V Fast Switching MOSFETs

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PKN3601 数据手册

PKN3601

P-Ch 30V Fast Switching MOSFETs

 Green Device Available

 Super Low Gate Charge

 Excellent CdV/dt effect decline

 Advanced high cell density Trench

technology

Product Summary

BVDSS

RDSON

-30V

55mΩ

-4.3A

SOT 23 Pin Configurations

Description

The PKN3601 is the high cell density trenched

P-ch MOSFETs, which provides excellent RDSON

and efficiency for most of the small power

switching and load switch applications.

The PKN3601 meet the RoHS and Green Product

requirement with full function reliability approved.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

-30

±12

-4.3

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current

Pulsed Drain Current²

-3.6

-20

P_D@T_A=25℃

P_D@T_A=70℃

T_STG

Total Power Dissipation³

Storage Temperature Range

1.4

℃

0.9

-55 to 150

T_J

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

R_θJA

Parameter

Typ.

---

Max.

125

Unit

℃/W

Thermal Resistance Junction-Ambient ¹

Thermal Resistance Junction-Ambient ¹(t ≤10s)

R_θJA

---

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