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PKN4002 PDF预览

PKN4002

更新时间: 2024-11-15 01:24:19
品牌 Logo 应用领域
PACELEADER /
页数 文件大小 规格书
5页 1325K
描述
N-Ch 40V Fast Switching MOSFETs

PKN4002 数据手册

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PKN4002  
N-Ch 40V Fast Switching MOSFETs  
Green Device Available  
Super Low Gate Charge  
Excellent Cdv/dt effect decline  
Advanced high cell density Trench  
technology  
Product Summary  
BVDSS  
RDSON  
ID  
40V  
32mΩ  
5A  
Description  
SOT23 Pin Configuration  
The PKN4002 is the high cell density trenched  
N-ch MOSFETs, which provides excellent RDSON  
and efficiency for most of the small power  
switching and load switch applications.  
The PKN4002 meet the RoHS and Green Product  
requirement with full function reliability approved.  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Rating  
40  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current, VGS @ 10V1  
Continuous Drain Current, VGS @ 10V1  
Pulsed Drain Current2  
5
4.1  
A
A
16  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation3  
1.25  
W
Storage Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
RθJA  
Parameter  
Typ.  
---  
Max.  
100  
60  
Unit  
/W  
/W  
Thermal Resistance Junction-ambient 1  
Thermal Resistance Junction-Case1  
RθJC  
---  
1
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