Datasheet > PKN4101

PKN4101

更新时间： 2024-09-27 01:24:19

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PACELEADER		/
页数	文件大小	规格书
5页	1365K
描述
P-Ch 40V Fast Switching MOSFETs

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PKN4101 数据手册

PKN4101

P-Ch 40V Fast Switching MOSFETs

 Green Device Available

 Super Low Gate Charge

 Excellent CdV/dt effect decline

 Advanced high cell density Trench

technology

Product Summary

BVDSS

RDSON

-40V

70mΩ

-3.2A

Description

SOT 23 Pin Configuration

The PKN4101 is the high cell density trenched

P-ch MOSFETs, which provides excellent RDSON

and efficiency for most of the small power

switching and load switch applications.

The PKN4101 meet the RoHS and Green Product

requirement with full function reliability approved.

Absolute Maximum Ratings

Rating

Symbol

Parameter

Units

10s

Steady State

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

-40

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current, V_GS@ -4.5V¹

Pulsed Drain Current²

-3.7

-3.0

-3.2

-2.6

-16.1

P_D@T_A=25℃

P_D@T_A=70℃

T_STG

Total Power Dissipation³

1.32

0.84

℃

Total Power Dissipation³

0.64

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

R_θJA

Parameter

Typ.

---

Max.

Unit

℃/W

Thermal Resistance Junction-Ambient ¹

Thermal Resistance Junction-Ambient ¹(t ≤10s)

Thermal Resistance Junction-Case¹

125

R_θJA

---

R_θJC

---

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