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PKN3502 PDF预览

PKN3502

更新时间: 2024-11-15 01:24:19
品牌 Logo 应用领域
PACELEADER /
页数 文件大小 规格书
5页 1382K
描述
N-Ch 30V Fast Switching MOSFETs

PKN3502 数据手册

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PKN3502  
N-Ch 30V Fast Switching MOSFETs  
Green Device Available  
Super Low Gate Charge  
Excellent Cdv/dt effect decline  
Advanced high cell density Trench  
technology  
Product Summary  
BVDSS  
RDSON  
ID  
30V  
27mΩ  
5.8A  
Description  
SOT23 Pin Configuration  
The PKN3502 is the high cell density trenched  
N-ch MOSFETs, which provides excellent RDSON  
and efficiency for most of the small power  
switching and load switch applications.  
The PKN3502 meet the RoHS and Green Product  
requirement with full function reliability approved.  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Rating  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±12  
5.8  
V
V
VGS  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current  
Continuous Drain Current  
Pulsed Drain Current2  
Total Power Dissipation3  
Storage Temperature Range  
A
4.9  
A
20  
A
PD@TA=25℃  
TSTG  
1
W
-55 to 150  
TJ  
Operating Junction Temperature Range  
-55 to 150  
Thermal Data  
Symbol  
RθJA  
Parameter  
Typ.  
---  
Max.  
125  
85  
Unit  
/W  
/W  
Thermal Resistance Junction-ambient 1  
Thermal Resistance Junction-Ambient 1 (t 10s)  
RθJA  
---  
1
www.paceleader.tw  
1

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