Datasheet > PKN3502

PKN3502

更新时间： 2024-11-15 01:24:19

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页数	文件大小	规格书
5页	1382K
描述
N-Ch 30V Fast Switching MOSFETs

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PKN3502 数据手册

PKN3502

N-Ch 30V Fast Switching MOSFETs

 Green Device Available

 Super Low Gate Charge

 Excellent Cdv/dt effect decline

 Advanced high cell density Trench

technology

Product Summary

BVDSS

RDSON

30V

27mΩ

5.8A

Description

SOT23 Pin Configuration

The PKN3502 is the high cell density trenched

N-ch MOSFETs, which provides excellent RDSON

and efficiency for most of the small power

switching and load switch applications.

The PKN3502 meet the RoHS and Green Product

requirement with full function reliability approved.

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Rating

Units

Drain-Source Voltage

Gate-Source Voltage

±12

5.8

V_GS

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current

Pulsed Drain Current²

Total Power Dissipation³

Storage Temperature Range

4.9

P_D@T_A=25℃

T_STG

℃

-55 to 150

T_J

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

R_θJA

Parameter

Typ.

---

Max.

125

Unit

℃/W

Thermal Resistance Junction-ambient ¹

Thermal Resistance Junction-Ambient ¹(t ≤10s)

R_θJA

---

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