Datasheet > PJS6815

PJS6815

更新时间： 2024-11-22 01:24:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	264K
描述
20V P-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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PJS6815 数据手册

PPJS6815

20V P-Channel Enhancement Mode MOSFET

SOT-23 6L-1

Unit: inch(mm)

-20 V

-3.6A

Voltage

Current

Features

 RDS(ON) , VGS@-4.5V, ID@-3.6A<57mΩ

 RDS(ON) , VGS@-2.5V, ID@-2.8A<70mΩ

 RDS(ON) , VGS@-1.8V, ID@-2.1A<95mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 Lead free in compliance with EU RoHS 2011/65/EU

directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-23 6L-1 Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.014 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

-20

+12

Continuous Drain Current

Pulsed Drain Current

-3.6

I_DM

-14.4

1.25

T_a=25^oC

Derate above 25^oC

Power Dissipation

P_D

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

100

May 6,2015-REV.03

Page 1

12 3 4 5 6

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