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PJSD05CTS PDF预览

PJSD05CTS

更新时间: 2024-11-21 10:09:47
品牌 Logo 应用领域
强茂 - PANJIT 二极管光电二极管局域网
页数 文件大小 规格书
3页 166K
描述
BI-DIRECTIONAL ESD PROTECTION DIODE

PJSD05CTS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-F2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.63Is Samacsys:N
最大击穿电压:7.82 V最小击穿电压:5.78 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F2
最大非重复峰值反向功率耗散:100 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大重复峰值反向电压:5 V表面贴装:YES
技术:AVALANCHE端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

PJSD05CTS 数据手册

 浏览型号PJSD05CTS的Datasheet PDF文件第2页浏览型号PJSD05CTS的Datasheet PDF文件第3页 
PJSD05CTS  
BI-DIRECTIONAL ESD PROTECTION DIODE  
This Penta has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up  
events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect up to  
data line where the board space is a premium.  
SPECIFICATION FEATURES  
• 100W Power Dippsipation (8/20µs Waveform)  
• Low Leakage Current,Maximum of 0.5µA@5Vdc  
• Very low Clamping voltage  
• IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance  
• In compliance with EU RoHS 2002/95/EC directivess  
APPLICATIONS  
• Video I/O ports protection  
• Set Top Boxes  
• Portable Instrumentation  
• Case : SOD-523 plastic  
Terminals : Solderable per MIL-STD-750,Method 2026  
• Approx Weight : 0.0014 grams  
• Marking : RS  
2
1
Fig.130  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
Units  
W
Peak Pulse Power (8/20 µs Waveform)  
Peak Pulse Current (8/20 µs Waveform)  
ESD Voltage (HBM)  
P
PP  
5.0  
A
I
PP  
>25  
kV  
OC  
VESD  
,TSTG  
Operating Junction and Storage Temperature Range  
T
J
-55 to 150  
ELECTRICAL CHARACTERISTICS(TA=25oC)  
Parameter  
Symbol  
Conditions  
Min.  
Typ.  
Max.  
5.0  
7.82  
0.5  
12  
Units  
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage (8/20µs)  
Clamping Voltage (8/20µs)  
Off State Junction Capacitance  
Off State Junction Capacitance  
V
WRM  
-
-
-
-
-
-
-
-
V
V
V
BR  
R
I
BR=1mA  
=3.5V  
5.78  
µA  
V
I
V
R
-
-
-
-
-
V
V
C
C
I
I
PP=1A  
PP=4A  
15  
V
C
C
J
J
0 Vdc Bias f=1MHz  
5 Vdc Bias f=1MHz  
30  
pF  
pF  
25  
PAGE . 1  
REV.0.4-FEB.25.2009  

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