Datasheet > PJSD03TS_15

PJSD03TS_15

更新时间： 2024-11-26 01:25:19

品牌	Logo	应用领域
强茂 - PANJIT		电视
页数	文件大小	规格书
7页	211K
描述
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS

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中文翻译

获取价格

数据手册

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PJSD03TS_15 数据手册

PJSD03TS~PJSD36TS

SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS

120 Watt

3~36 Volt

POWER

VOLTAGE

FEATURES

• 120 Watts peak pules power( tp=8/20μs)

0.050(1.25)

0.045(1.15)

• Small package for use in portable electronics

• Suitable replacement for MLV’S in ESD protection applications

• Low clamping voltage and leakage current

0.014(0.35)

0.009(0.25)

0.034(0.85)

0.029(0.75)

0.026(0.65)

0.021(0.55)

• Lead free in compliance with EU RoHS 2011/65/EU directive

APPLICATIONS

0.006(0.15)

0.002(0.05)

• Case: SOD-523 plastic

0.067(1.70)

0.059(1.50)

• Terminals : Solderable per MIL-STD-750,Method 2026

• Approx Weight: 0.00005 ounces, 0.0014 grams

• Marking : PJSD03TS : KD

0.20 MIN.

PJSD05TS : KE

PJSD07TS : KF

PJSD08TS : KR

Cathode

Anode

PJSD12TS : LE

PJSD15TS : LM

PJSD24TS : LZ

PJSD36TS : MP

MAXIMUMRATINGSANDELECTRICALCHATACTERISTICS

ABSOLUTE MAXIMUM RATING

Rating

Peak Pulse Power Dissipation (tp=8/20 μs)

ESD Voltage

Symbol

P_PP

Value

Units

120

^OC

V_ESD

Operating Temperature

T_J

-50 to +150

Storage Temperature

T_STG

ELECTRICALCHATACTERISTICS

PJSD03TS

Parameter

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Symbol

V_RWM

V_BR

Conditions

Min.

Typical

Max.

3.3

Units

I _BR=1mA

V_R=3.3V

I _R

200

μA

Clamping Voltage(8/20μs)

V_C

I _PP=5A

6.5

Off State Junction Capacitance

C_J

0Vdc Bias=f=1MHz

200

100

3.3Vdc Bias=f=1MHz

PAGE . 1

August 11,2015-REV.01

12 3 4 5 6 7

中文翻译

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