Datasheet > PJSD03LCTM

PJSD03LCTM

更新时间： 2024-11-26 01:25:11

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	258K
描述
BI-DIRECTIONAL ESD PROTECTION DIODE

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中文翻译

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PJSD03LCTM 数据手册

PJSD03LCTM

BI-DIRECTIONAL ESD PROTECTION DIODE

This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up

events in CMOS circuitry operating at 3.3Vdc and below.This offers an integrated solution to protect a single data

line where the board space is a premium.

SPECIFICATION FEATURES

• 50W Power Dissipation (8/20μs Waveform)

• Low Leakage Current, Maximum of 2.5μA@3.3Vdc

• Very low Clamping voltage

• IEC 61000-4-2 ESD + 15kV air, + 8kV Contact Compliance

• Lead free in comply with EU RoHS 2002/95/EC directives.

0.034(0.85)

0.029(0.75)

• Green molding compound as per IEC61249 Std. . (Halogen Free)

• Terminals : Solderable per MIL-STD-750, Method 2026

0.026(0.65)

• Approx. Weight: 0.00002 ounces, 0.0005grams

0.018(0.45)

0.021(0.55)

• Case : SOD-923, Plastic

0.013(0.35)

• Marking : O

APPLICATIONS

0.007(0.18)

• Video I/O ports protection

0.003(0.08)

0.042(1.05)

0.037(0.95)

• Set Top Boxes

• Portable Instrumentation

MAXIMUM RATINGS (TA=25^oC unless otherwise noted)

RATING

Peak Pulse Power (8/20 μs Waveform)

Peak Pulse Current (8/20 μs Waveform)

IEC61000-4-2 Contact

SYMBOL

VALUE

UNITS

PPM

ESD

IEC61000-4-2 Air

+15

Operating Junction and Storage Temperature Range

,TSTG

-55 to +150

^OC

ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)

PARAMETER

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage (8/20ms)

Off State Junction Capacitance

SYMBOL

CONDITION

MIN.

TYP.

MAX.

3.3

7.0

2.5

16.6

UNITS

RWM

5.4

BR=1mA

=3.3V

PP=3A

0 Vdc Bias f=1MH

μA

PAGE . 1

November 10,2011-REV.00

12 3 4 5

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