Datasheet > PJSD03TS_10

PJSD03TS_10

更新时间： 2024-11-25 12:20:07

品牌	Logo	应用领域
强茂 - PANJIT		二极管电视电子便携式
页数	文件大小	规格书
5页	101K
描述
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS

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中文翻译

获取价格

数据手册

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PJSD03TS_10 数据手册

PJSD03TS~PJSD36TS

SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS

120 Watts

3~36 Volts

POWER

VOLTAGE

FEATURES

• 120 Watts peak pules power( tp=8/20μs)

• Small package for use in portable electronics

• Suitable replacement for MLV’S in ESD protection applications

• Low clamping voltage and leakage current

• In compliance with EU RoHS 2002/95/EC directives

APPLICATIONS

• Case: SOD-523 plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

• Approx Weight: 0.0014 grams

• Marking : PJSD03TS : KD

PJSD05TS : KE

PJSD07TS : KF

PJSD08TS : KR

Cathode

Anode

PJSD12TS : LE

PJSD15TS : LM

PJSD24TS : LZ

PJSD36TS : MP

MAXIMUMRATINGSANDELECTRICALCHATACTERISTICS

ABSOLUTE MAXIMUM RATING

Rating

Peak Pulse Power Dissipation (tp=8/20 μs)

ESD Voltage

Symbol

P_PP

Value

120

Units

V_ESD

^OC

Operating Temperature

T_J

-50 to +150

Storage Temperature

T_STG

^OC

ELECTRICALCHATACTERISTICS

PJSD03TS

Parameter

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Symbol

V_RWM

V_BR

Conditions

Min.

Typical

Max.

3.3

Units

I _BR=1mA

V_R=3.3V

I _R

200

μA

Clamping Voltage(8/20μs)

V_C

I _PP=5A

6.5

Off State Junction Capacitance

C_J

0Vdc Bias=f=1MHz

200

100

3.3Vdc Bias=f=1MHz

PAGE . 1

July 20.2010-REV.00

12 3 4 5

中文翻译

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