Datasheet > PJS6830

PJS6830

更新时间： 2024-11-26 14:53:39

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	448K
描述
SOT-23 6L

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PJS6830 数据手册

PJS6830

20V Dual N-Channel Enhancement Mode MOSFET – ESD Protected

SOT-23 6L

Unit: inch(mm)

20 V

2 A

Voltage

Current

Features

 RDS(ON) , VGS@4.5V, ID@2.0A<150mΩ

 RDS(ON) , VGS@2.5V, ID@1.5A<215mΩ

 RDS(ON) , VGS@1.8V, ID@0.5A<400mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected 2KV HBM

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: SOT-23 6L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.0141 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

Continuous Drain Current

Pulsed Drain Current^{(Note 4)}

I_DM

T_a=25^oC

1.25

Power Dissipation

P_D

Derate above 25^oC

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

T_J,T_STG

-55~150

R_θJA

100

Junction to Ambient^{(Note 3)}

^oC/W

January 20,2022

PJS6830-REV.01

Page 1

12 3 4 5 6

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