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PJSD03TG PDF预览

PJSD03TG

更新时间: 2024-11-25 06:03:47
品牌 Logo 应用领域
强茂 - PANJIT 二极管电视电子便携式
页数 文件大小 规格书
5页 179K
描述
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS

PJSD03TG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.8最小击穿电压:4 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F2
最大非重复峰值反向功率耗散:100 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:3.3 V
表面贴装:YES技术:AVALANCHE
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

PJSD03TG 数据手册

 浏览型号PJSD03TG的Datasheet PDF文件第2页浏览型号PJSD03TG的Datasheet PDF文件第3页浏览型号PJSD03TG的Datasheet PDF文件第4页浏览型号PJSD03TG的Datasheet PDF文件第5页 
PJSD03TG~PJSD36TG  
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS  
100 Watts  
POWER  
3~36 Volts  
VOLTAGE  
FEATURES  
• 100 Watts peak pules power( tp=8/20µs)  
• Small package for use in portable electronics  
• Suitable replacement for MLV’S in ESD protection applications  
• Low clamping voltage and leakage current  
• In compliance with EU RoHS 2002/95/EC directives  
APPLICATIONS  
• Case: SOD-723 plastic  
Terminals : Solderable per MIL-STD-750,Method 2026  
• Approx.Weight : 0.00077 gram  
• Marking : PJSD03TG: FS  
PJSD05TG : FT  
PJSD08TG : FU  
PJSD12TG : FV  
PJSD15TG : FW  
PJSD24TG : FX  
PJSD36TG : FY  
MAXIMUMRATINGSANDELECTRICALCHATACTERISTICS  
ABSOLUTE MAXIMUM RATING  
Rating  
Peak Pulse Power (tp=8/20 µs)  
ESD Voltage  
Symbol  
PPK  
Value  
100  
Units  
W
25  
KV  
OC  
VESD  
TJ  
Operating Temperature  
-50OC to 150 O  
C
C
Storage Temperature  
-50OC to 150 O  
OC  
TSTG  
ELECTRICAL CHARA CTERISTICS  
PJSD03TG  
Parameter  
Symbol  
VRWM  
VBR  
Conditions  
-
Min.  
Typical  
Max.  
3.3  
-
Units  
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
-
4
-
-
-
-
V
V
IBR=1mA  
VR=3.3V  
µA  
IR  
125  
Clamping Voltage(8/20 µs)  
VC  
IPP=1A  
-
-
7
V
Off State Junction Capacitance  
Off State Junction Capacitance  
CJ  
CJ  
0Vdc Bias=f=1MHz  
3Vdc Bias=f=1MHz  
-
-
180  
100  
-
-
pF  
pF  
PAGE . 1  
STAD-MAY.18.2007  

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