Datasheet > PJS6832

PJS6832

更新时间： 2024-11-22 01:24:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	308K
描述
30V N-Channel Enhancement Mode MOSFET â ESD Protected

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PJS6832 数据手册

PPJS6832

30V N-Channel Enhancement Mode MOSFET – ESD Protected

SOT-23 6L

Unit: inch(mm)

30 V

1.6A

Voltage

Current

Features

 RDS(ON) , VGS@4,5V, ID@1.6A<200mΩ

 RDS(ON) , VGS@2.5V, ID@1.1A<270mΩ

 RDS(ON) , VGS@1.8V, ID@0.2A<570mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected 2KV HBM

 Lead free in compliance with EU RoHS 2011/65/EU directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-23 6L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.0141 grams

 Marking: SG2

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

Continuous Drain Current

1.6

(Note 4)

Pulsed Drain Current

I_DM

6.4

T_a=25^oC

Derate above 25^oC

1.25

Power Dissipation

P_D

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

100

January 22,2015-REV.02

Page 1

12 3 4 5 6

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