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PJSD03W PDF预览

PJSD03W

更新时间: 2024-11-21 06:03:47
品牌 Logo 应用领域
强茂 - PANJIT 二极管电视电子便携式
页数 文件大小 规格书
5页 97K
描述
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS

PJSD03W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.68最大击穿电压:5 V
最小击穿电压:4 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-F2最大非重复峰值反向功率耗散:350 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大重复峰值反向电压:3 V
表面贴装:YES技术:AVALANCHE
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

PJSD03W 数据手册

 浏览型号PJSD03W的Datasheet PDF文件第2页浏览型号PJSD03W的Datasheet PDF文件第3页浏览型号PJSD03W的Datasheet PDF文件第4页浏览型号PJSD03W的Datasheet PDF文件第5页 
PJSD03W~PJSD36W  
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS  
Unit: inch (mm)  
SOD-323  
320 Watts  
POWER  
3~36 Volts  
VOLTAGE  
FEATURES  
.078(1.95)  
.068(1.75)  
• 320 Watts peak pules power( tp=8/20µs)  
• Small package for use in portable electronics  
• Suitable replacement for MLV’S in ESD protection applications  
• Low clamping voltage and leakage current  
• Pb free product are available : 99% Sn above can meet RoHS  
.038(.95)  
.027(.70)  
environment substance directive request  
.107(2.7)  
.090(2.3)  
APPLICATIONS  
.012(.30)MIN.  
• Case: SOD-323 plastic  
Terminals : Solderable per MIL-STD-750,Method 2026  
• Approx Weight: 0.0041 grams  
MAXIMUMRATINGSANDELECTRICALCHATACTERISTICS  
ABSOLUTE MAXIMUM RATING  
Rating  
Peak Pulse Power (tp=8/20 µs)  
ESD Voltage  
Symbol  
PPK  
Value  
320  
Units  
W
25  
KV  
OC  
VESD  
TJ  
Operating Temperature  
-50OC to 150 O  
C
C
Storage Temperature  
-50OC to 150 O  
OC  
TSTG  
ELECTRICAL CHARA CTERISTICS  
PJSD03W  
Parameter  
Symbol  
VRWM  
VBR  
Conditions  
-
Min.  
Typical  
Max.  
3.3  
-
Units  
V
Reverse Stand-Off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
-
4
-
-
-
-
IBR=1mA  
VR=3.3V  
V
µA  
IR  
125  
Clamping Voltage(8/20 µs)  
VC  
IPP=1A  
-
-
6.5  
V
Off State Junction Capacitance  
Off State Junction Capacitance  
CJ  
CJ  
0Vdc Bias=f=1MHz  
5Vdc Bias=f=1MHz  
-
-
450  
150  
-
-
pF  
pF  
PAGE . 1  
REV.0-JAN.6.2005  

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反向截止电压(Vrwm):5v;极性/通道数(Channel):1-Line,Bidire