Datasheet > PJS6809

PJS6809

更新时间： 2024-11-26 01:24:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	274K
描述
30V P-Channel Enhancement Mode MOSFET

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中文翻译

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数据手册

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PJS6809 数据手册

PPJS6809

30V P-Channel Enhancement Mode MOSFET

SOT-23 6L

Unit : inch(mm)

-30 V

-2.6A

Voltage

Current

Features

 RDS(ON) , VGS@-10V, ID@-2.6A<115mΩ

 RDS(ON) , VGS@-4.5V, ID@-1.7A<150mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 Lead free in compliance with EU RoHS 2011/65/EU

directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-23 6L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.014 grams

 Marking: ST9

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

-30

+20

Continuous Drain Current

Pulsed Drain Current

-2.6

I_DM

-10.4

1.25

T_a=25^oC

Derate above 25^oC

Power Dissipation

P_D

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

100

June 8,2015-REV.03

Page 1

12 3 4 5 6

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