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PHP44N06LT PDF预览

PHP44N06LT

更新时间: 2024-01-11 09:36:27
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
10页 84K
描述
TrenchMOS transistor Logic level FET

PHP44N06LT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
其他特性:ESD PROTECTED雪崩能效等级(Eas):70 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):44 A
最大漏极电流 (ID):44 A最大漏源导通电阻:0.028 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):114 W
最大脉冲漏极电流 (IDM):176 A认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PHP44N06LT 数据手册

 浏览型号PHP44N06LT的Datasheet PDF文件第2页浏览型号PHP44N06LT的Datasheet PDF文件第3页浏览型号PHP44N06LT的Datasheet PDF文件第4页浏览型号PHP44N06LT的Datasheet PDF文件第5页浏览型号PHP44N06LT的Datasheet PDF文件第6页浏览型号PHP44N06LT的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
TrenchMOS transistor  
Logic level FET  
PHP44N06LT, PHB44N06LT, PHD44N06LT  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
’Trench’ technology  
• Very low on-state resistance  
• Fast switching  
• Stable off-state characteristics  
• High thermal cycling performance  
• Low thermal resistance  
VDSS = 55 V  
d
ID = 44 A  
R
DS(ON) 28 m(VGS = 5 V)  
g
RDS(ON) 26 m(VGS = 10 V)  
s
GENERAL DESCRIPTION  
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.  
The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching  
applications.  
The PHP44N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PHB44N06LT is supplied in the SOT404 surface mounting package.  
The PHD44N06LT is supplied in the SOT428 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404  
SOT428  
PIN  
1
DESCRIPTION  
tab  
tab  
tab  
gate  
2
drain1  
source  
3
2
2
tab drain  
1
3
1
3
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Continuous drain current  
Tj = 25 ˚C to 175˚C  
Tj = 25 ˚C to 175˚C; RGS = 20 k  
-
-
-
-
-
-
-
55  
55  
± 13  
44  
V
V
V
A
A
A
W
˚C  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
31  
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
176  
114  
175  
- 55  
1 It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.  
September 1998  
1
Rev 1.400  

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