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PHP44N06T PDF预览

PHP44N06T

更新时间: 2024-01-25 21:43:21
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
8页 68K
描述
TrenchMOS transistor Standard level FET

PHP44N06T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
其他特性:ESD PROTECTED雪崩能效等级(Eas):70 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):44 A
最大漏极电流 (ID):44 A最大漏源导通电阻:0.028 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):114 W
最大脉冲漏极电流 (IDM):176 A认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PHP44N06T 数据手册

 浏览型号PHP44N06T的Datasheet PDF文件第2页浏览型号PHP44N06T的Datasheet PDF文件第3页浏览型号PHP44N06T的Datasheet PDF文件第4页浏览型号PHP44N06T的Datasheet PDF文件第5页浏览型号PHP44N06T的Datasheet PDF文件第6页浏览型号PHP44N06T的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
TrenchMOS transistor  
Standard level FET  
PHP44N06T  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
standard level field-effect power  
transistor in a plastic envelope using  
trench’ technology. The device  
features very low on-state resistance  
and has integral zener diodes giving  
ESD protection up to 2kV. It is  
intended for use in DC-DC  
converters and general purpose  
switching applications.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Ptot  
Tj  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Junction temperature  
Drain-source on-state  
55  
44  
114  
175  
28  
V
A
W
˚C  
m  
RDS(ON)  
resistance  
VGS = 10 V  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
tab  
gate  
2
drain  
g
3
source  
tab drain  
s
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
ID  
ID  
IDM  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Drain current (DC)  
-
-
-
-
-
-
-
-
55  
55  
20  
44  
31  
176  
114  
175  
V
V
V
A
A
A
W
˚C  
RGS = 20 kΩ  
-
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
Drain current (DC)  
Drain current (pulse peak value)  
Total power dissipation  
Storage & operating temperature  
Ptot  
Tstg, Tj  
- 55  
ESD LIMITING VALUE  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VC  
Electrostatic discharge capacitor  
voltage, all pins  
Human body model  
(100 pF, 1.5 k)  
-
2
kV  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Thermal resistance junction to  
mounting base  
-
-
1.31  
K/W  
Rth j-a  
Thermal resistance junction to  
ambient  
in free air  
60  
-
K/W  
December 1997  
1
Rev 1.100  

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