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PHP45NQ10T

更新时间: 2024-09-30 20:20:31
品牌 Logo 应用领域
飞利浦 - PHILIPS 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 110K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

PHP45NQ10T 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.71Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):47 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)Base Number Matches:1

PHP45NQ10T 数据手册

 浏览型号PHP45NQ10T的Datasheet PDF文件第2页浏览型号PHP45NQ10T的Datasheet PDF文件第3页浏览型号PHP45NQ10T的Datasheet PDF文件第4页浏览型号PHP45NQ10T的Datasheet PDF文件第5页浏览型号PHP45NQ10T的Datasheet PDF文件第6页浏览型号PHP45NQ10T的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
N-channel TrenchMOS transistor  
PHB45NQ10T, PHP45NQ10T  
PHW45NQ10T  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
’Trench’ technology  
• Very low on-state resistance  
• Fast switching  
VDSS = 100 V  
ID = 47 A  
• Low thermal resistance  
g
RDS(ON) 25 mΩ  
s
GENERAL DESCRIPTION  
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.  
Applications:-  
• d.c. to d.c. converters  
• switched mode power supplies  
The PHP45NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PHB45NQ10T is supplied in the SOT404 (D2PAK) surface mounting package.  
The PHW45NQ10T is supplied in the SOT429 (TO247) conventional leaded package.  
PINNING  
SOT78 (TO220AB)  
SOT404 (D2PAK)  
SOT429 (TO247)  
PIN  
1
DESCRIPTION  
tab  
tab  
gate  
2
drain1  
source  
3
2
2
tab drain  
1
3
1
3
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Continuous drain current  
Tj = 25 ˚C to 175˚C  
Tj = 25 ˚C to 175˚C; RGS = 20 k  
-
-
-
-
100  
100  
± 20  
47  
V
V
V
A
A
Tmb = 25 ˚C; VGS = 10 V  
Tmb = 100 ˚C; VGS = 10 V  
-
33  
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
-
-
188  
150  
175  
A
W
˚C  
- 55  
1 It is not possible to make connection to pin 2 of the SOT404 package.  
August 1999  
1
Rev 1.000  

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