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PHP4ND40E PDF预览

PHP4ND40E

更新时间: 2024-01-18 22:00:49
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
9页 66K
描述
PowerMOS transistors FREDFET, Avalanche energy rated

PHP4ND40E 数据手册

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Philips Semiconductors  
Product specification  
PowerMOS transistors  
FREDFET, Avalanche energy rated  
PHP4ND40E, PHB4ND40E  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
• Repetitive Avalanche Rated  
• Fast switching  
VDSS = 400 V  
• Stable off-state characteristics  
• High thermal cycling performance  
• Low thermal resistance  
ID = 4.4 A  
g
R
DS(ON) 1.8 Ω  
• Fast reverse recovery diode  
trr = 180 ns  
s
GENERAL DESCRIPTION  
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).  
This gives improved switching performance in half bridge ansd full bridge converters making this device particularly  
suitable for inverters, lighting ballasts and motor control circuits.  
The PHP4ND40E is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PHB4ND40E is supplied in the SOT404 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404  
PIN  
DESCRIPTION  
tab  
tab  
1
2
gate  
drain 1  
3
source  
drain  
2
tab  
1 2 3  
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Tj = 25 ˚C to 150˚C  
-
400  
400  
± 30  
4.4  
2.7  
18  
V
V
Drain-gate voltage  
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ  
-
Gate-source voltage  
Continuous drain current  
-
V
Tmb = 25 ˚C; VGS = 10 V  
Tmb = 100 ˚C; VGS = 10 V  
Tmb = 25 ˚C  
-
A
-
A
IDM  
Pulsed drain current  
Total dissipation  
Operating junction and  
storage temperature range  
-
-
A
PD  
Tmb = 25 ˚C  
83  
W
˚C  
Tj, Tstg  
- 55  
150  
August 1998  
1
Rev 1.100  

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