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PHP4N60E PDF预览

PHP4N60E

更新时间: 2024-01-16 04:22:05
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
9页 84K
描述
PowerMOS transistors Avalanche energy rated

PHP4N60E 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.76
其他特性:FAST SWITCHING雪崩能效等级(Eas):295 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):4.5 A
最大漏源导通电阻:2.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):18 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PHP4N60E 数据手册

 浏览型号PHP4N60E的Datasheet PDF文件第2页浏览型号PHP4N60E的Datasheet PDF文件第3页浏览型号PHP4N60E的Datasheet PDF文件第4页浏览型号PHP4N60E的Datasheet PDF文件第5页浏览型号PHP4N60E的Datasheet PDF文件第6页浏览型号PHP4N60E的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
PowerMOS transistors  
Avalanche energy rated  
PHP4N60E, PHB4N60E  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
• Repetitive Avalanche Rated  
• Fast switching  
VDSS = 600 V  
ID = 4.5 A  
• Stable off-state characteristics  
• High thermal cycling performance  
• Low thermal resistance  
g
RDS(ON) 2.5 Ω  
s
GENERAL DESCRIPTION  
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,  
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching  
applications.  
The PHP4N60E is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PHB4N60E is supplied in the SOT404 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404  
PIN  
DESCRIPTION  
tab  
tab  
1
2
gate  
drain 1  
3
source  
drain  
2
tab  
1 2 3  
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Tj = 25 ˚C to 150˚C  
-
600  
600  
± 30  
4.5  
V
V
Drain-gate voltage  
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ  
-
Gate-source voltage  
Continuous drain current  
-
V
Tmb = 25 ˚C; VGS = 10 V  
Tmb = 100 ˚C; VGS = 10 V  
Tmb = 25 ˚C  
-
A
-
2.9  
A
IDM  
Pulsed drain current  
Total dissipation  
Operating junction and  
storage temperature range  
-
-
18  
125  
150  
A
PD  
Tmb = 25 ˚C  
W
˚C  
Tj, Tstg  
- 55  
December 1998  
1
Rev 1.200  

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