是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.78 |
其他特性: | ESD PROTECTED | 雪崩能效等级(Eas): | 60 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 45 A |
最大漏极电流 (ID): | 45 A | 最大漏源导通电阻: | 0.024 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 86 W |
最大脉冲漏极电流 (IDM): | 180 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Powers | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PHP45NQ10T | NXP |
获取价格 |
N-channel TrenchMOS transistor |
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PHP45NQ10T | PHILIPS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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PHP45NQ10T | NEXPERIA |
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N-channel TrenchMOS standard level FETProduction |
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PHP45NQ11T | NXP |
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N-channel TrenchMOS standard level FET |
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PHP45NQ15T | NXP |
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N-channel TrenchMOS standard level FET |
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PHP45NQ15T,127 | NXP |
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TRANSISTOR 45.1 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-4 |
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PHP47NQ10T | NXP |
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N-channel enhancement mode field-effect transistor |
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PHP47NQ10T,127 | NXP |
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PHP47NQ10T - N-channel TrenchMOS standard level FET TO-220 3-Pin |
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PHP4N40E | NXP |
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PowerMOS transistors Avalanche energy rated |
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PHP4N40E127 | NXP |
获取价格 |
TRANSISTOR 4.4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purp |
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