是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.82 | Is Samacsys: | N |
配置: | Single | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.7 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PHN103/T3 | NXP |
获取价格 |
TRANSISTOR 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SOP-8, F | |
PHN103112 | NXP |
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TRANSISTOR 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, FET General Purpo | |
PHN103118 | NXP |
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TRANSISTOR 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, FET General Purpo | |
PHN103S | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 6A I(D) | SO | |
PHN103T | NXP |
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TRANSISTOR 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SO-8, FET General | |
PHN103T,118 | NXP |
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PHN103T | |
PHN103T/R | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | SO | |
PHN103T/T3 | NXP |
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TRANSISTOR 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SO-8, FET General | |
PHN105-TAPE-7 | NXP |
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TRANSISTOR 4.8 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
PHN110 | NXP |
获取价格 |
N-channel enhancement mode MOS transistor |