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PESD5V0V1BL

更新时间: 2024-02-07 08:40:04
品牌 Logo 应用领域
恩智浦 - NXP 二极管PC局域网
页数 文件大小 规格书
13页 120K
描述
Very low capacitance bidirectional ESD protection diodes

PESD5V0V1BL 技术参数

生命周期:Transferred包装说明:0.60 X 0.30 MM, 0.30 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, ULTRA SMALL PACKAGE-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.4Is Samacsys:N
最大击穿电压:10 V最小击穿电压:6 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PBCC-N2
最大非重复峰值反向功率耗散:8 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性:BIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:5 V表面贴装:YES
技术:AVALANCHE端子形式:NO LEAD
端子位置:BOTTOMBase Number Matches:1

PESD5V0V1BL 数据手册

 浏览型号PESD5V0V1BL的Datasheet PDF文件第2页浏览型号PESD5V0V1BL的Datasheet PDF文件第3页浏览型号PESD5V0V1BL的Datasheet PDF文件第4页浏览型号PESD5V0V1BL的Datasheet PDF文件第5页浏览型号PESD5V0V1BL的Datasheet PDF文件第6页浏览型号PESD5V0V1BL的Datasheet PDF文件第7页 
PESD5V0V1BA;PESD5V0V1BB;  
PESD5V0V1BL  
Very low capacitance bidirectional ESD protection diodes  
Rev. 01 — 28 July 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in  
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal  
line from the damage caused by ESD and other transients.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Package configuration  
JEITA  
SC-76  
SC-79  
-
PESD5V0V1BA  
PESD5V0V1BB  
PESD5V0V1BL  
SOD323  
SOD523  
SOD882  
very small  
ultra small and flat lead  
leadless ultra small  
1.2 Features  
I Bidirectional ESD protection of one line I ESD protection up to 30 kV  
I Very low diode capacitance: Cd = 11 pF I IEC 61000-4-2; level 4 (ESD)  
I Max. peak pulse power: PPP = 45 W  
I Low clamping voltage: VCL = 12.5 V  
I Ultra low leakage current: IRM < 1 nA  
I IEC 61000-4-5 (surge); IPP = 4.8 A  
I AEC-Q101 qualified  
1.3 Applications  
I Computers and peripherals  
I Audio and video equipment  
I Cellular handsets and accessories  
I Communication systems  
I Portable electronics  
I 10/100 Mbit/s Ethernet  
I Subscriber Identity Module (SIM) card I FireWire  
protection  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ  
-
Max  
5
Unit  
V
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
-
-
f = 1 MHz; VR = 0 V  
11  
13  
pF  

PESD5V0V1BL 替代型号

型号 品牌 替代类型 描述 数据表
PESD5V0V1BLD NXP

完全替代

Very low capacitance bidirectional ESD protection diode

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