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PESD5V0L1USF,315 PDF预览

PESD5V0L1USF,315

更新时间: 2024-09-20 15:47:47
品牌 Logo 应用领域
恩智浦 - NXP 局域网二极管
页数 文件大小 规格书
13页 253K
描述
PESD5V0L1USF - Low capacitance unidirectional ESD protection diode

PESD5V0L1USF,315 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:R-PBCC-N2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:8.03
Is Samacsys:N其他特性:IEC-61643-321
最大击穿电压:8 V最小击穿电压:6 V
击穿电压标称值:7 V最大钳位电压:10.5 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PBCC-N2
最大非重复峰值反向功率耗散:11 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性:UNIDIRECTIONAL参考标准:IEC-60134; IEC-61000-4-2; IEC-61000-4-5
最大重复峰值反向电压:5 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子形式:NO LEAD端子位置:BOTTOM
Base Number Matches:1

PESD5V0L1USF,315 数据手册

 浏览型号PESD5V0L1USF,315的Datasheet PDF文件第2页浏览型号PESD5V0L1USF,315的Datasheet PDF文件第3页浏览型号PESD5V0L1USF,315的Datasheet PDF文件第4页浏览型号PESD5V0L1USF,315的Datasheet PDF文件第5页浏览型号PESD5V0L1USF,315的Datasheet PDF文件第6页浏览型号PESD5V0L1USF,315的Datasheet PDF文件第7页 
PESD5V0L1USF  
Low capacitance unidirectional ESD protection diode  
Rev. 1 — 12 July 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode designed  
to protect one signal line from the damage caused by ESD and other transients. The  
device is encapsulated in a leadless super small DSN0603-2 (SOD962) Surface-Mounted  
Device (SMD) package.  
1.2 Features and benefits  
ESD protection of one line  
ESD protection up to 30 kV  
Low diode capacitance Cd = 12 pF  
Super small SMD package  
IEC 61000-4-2; level 4 (ESD)  
IEC 61643-321 (surge); IPPM = 1.2 A  
Ultra low leakage current IRM < 1 nA  
1.3 Applications  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
Communication systems  
Portable electronics  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ  
-
Max  
5
Unit  
V
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
-
f = 1 MHz; VR = 0 V  
9
12  
15  
pF  
 
 
 
 
 

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