Datasheet > PESD5V0L2UM

PESD5V0L2UM

更新时间： 2024-09-21 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		电视
页数	文件大小	规格书
5页	325K
描述
ESD/TVS 管

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中文翻译

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数据手册

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PESD5V0L2UM 数据手册

UMW

PESDXXXL2UM

FEATURES

• Uni-directional ESD protection of two lines or

■

bi-directional ESD protection of one line

■

• Reverse standoff voltage 3.3 and 5 V

■

• Low diode capacitance

■

• Ultra low leakage current

■

• Leadless ultra small SOT883 surface mount package

(1 × 0.6 × 0.5 mm)

■

• Board space 1.17 mm (approx. 10% of SOT23)

■

• ESD protection >15 kV

• IEC 61000-4-2; level 4 (ESD); 15 kV (air) or

■

8 kV (contact).

APPLICATIONS

DESCRIPTION

• Cellular handsets and accessories

■

Low capacitance ESD protection diode in a three pad

SOT883 leadless ultra small plastic package designed to

protect up to two transmission or data lines from

ElectroStatic Discharge (ESD) damage.

• Portable electronics

■

• Computers and peripherals

■

• Communication systems

■

• Audio and video equipment.

■

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

I_pp

peak pulse current

8/20 µs pulse; notes 1, 2 and 3

PESD3V3L2UM

−

PESD5V0L2UM

2.5

P_pp

peak pulse power

8/20 µs pulse; notes 1, 2 and 3

t_p= 1 ms; square pulse

I_FSM

I_ZSM

non-repetitive peak forward current

non-repetitive peak reverse current

PESD3V3L2UM

3.5

t_p= 1 ms; square pulse

−

0.9

0.8

250

PESD5V0L2UM

P_tot

total power dissipation

T_amb= 25 °C; note 4

P_ZSM

non-repetitive peak reverse power

dissipation

t_p= 1 ms; square pulse; see Fig.4

T_stg

T_j

storage temperature

junction temperature

electrostatic discharge

−65

+150

150

−

°C

−

ESD

IEC 61000-4-2 (contact discharge) 15

HBM MIL-Std 883 10

−

1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.

2. Pins 1 and 3 or 2 and 3.

3. Pins 1 and 2.

4. Device mounted on standard printed-circuit board.

www.umw-ic.com

友台半导体有限公司

12 3 4 5

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