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PESD5V0L4UWT/R PDF预览

PESD5V0L4UWT/R

更新时间: 2024-11-10 13:12:15
品牌 Logo 应用领域
恩智浦 - NXP 瞬态抑制器二极管局域网
页数 文件大小 规格书
17页 111K
描述
TRANSIENT SUPPRESSOR DIODE ARRAY,UNIDIRECTIONAL,5V V(RWM),SOT-665

PESD5V0L4UWT/R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
击穿电压标称值:6.8 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
极性:UNIDIRECTIONAL最大重复峰值反向电压:5 V
子类别:Transient Suppressors表面贴装:YES
Base Number Matches:1

PESD5V0L4UWT/R 数据手册

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PESDxL4UF; PESDxL4UG;  
PESDxL4UW  
Low capacitance unidirectional quadruple ESD protection  
diode arrays  
Rev. 04 — 28 February 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode  
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to  
four signal lines from the damage caused by ESD and other transients.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Package configuration  
JEITA  
JEDEC  
PESD3V3L4UF  
PESD5V0L4UF  
PESD3V3L4UG  
PESD5V0L4UG  
PESD3V3L4UW  
PESD5V0L4UW  
SOT886  
SOT886  
SOT353  
SOT353  
SOT665  
SOT665  
-
MO-252  
leadless ultra small  
leadless ultra small  
very small  
-
MO-252  
SC-88A  
-
-
-
-
SC-88A  
very small  
-
-
ultra small and flat lead  
ultra small and flat lead  
1.2 Features  
I ESD protection of up to four lines  
I Low diode capacitance  
I Ultra low leakage current: IRM = 5 nA  
I ESD protection up to 20 kV  
I Max. peak pulse power: PPP = 30 W  
I Low clamping voltage: VCL = 12 V  
I IEC 61000-4-2; level 4 (ESD)  
I IEC 61000-4-5 (surge); IPP = 2.5 A  
1.3 Applications  
I Computers and peripherals  
I Audio and video equipment  
I Cellular handsets and accessories  
I Communication systems  
I Portable electronics  
I Subscriber Identity Module (SIM) card  
protection  

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