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PESD5V0L4UW,115

更新时间: 2024-11-10 14:35:51
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
17页 101K
描述
PESDxL4UF; PESDxL4UG; PESDxL4UW - Low capacitance unidirectional quadruple ESD protection diode arrays SOT 5-Pin

PESD5V0L4UW,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT包装说明:ULTRA SMALL, PLASTIC, SMD, 5 PIN
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:3.3最大击穿电压:7.14 V
最小击穿电压:6.46 V击穿电压标称值:6.8 V
配置:COMMON ANODE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F5
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:30 W元件数量:4
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.25 W
认证状态:Not Qualified最大重复峰值反向电压:5 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

PESD5V0L4UW,115 数据手册

 浏览型号PESD5V0L4UW,115的Datasheet PDF文件第2页浏览型号PESD5V0L4UW,115的Datasheet PDF文件第3页浏览型号PESD5V0L4UW,115的Datasheet PDF文件第4页浏览型号PESD5V0L4UW,115的Datasheet PDF文件第5页浏览型号PESD5V0L4UW,115的Datasheet PDF文件第6页浏览型号PESD5V0L4UW,115的Datasheet PDF文件第7页 
PESDxL4UF; PESDxL4UG;  
PESDxL4UW  
Low capacitance unidirectional quadruple ESD protection  
diode arrays  
Rev. 04 — 28 February 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode  
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to  
four signal lines from the damage caused by ESD and other transients.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Package configuration  
JEITA  
JEDEC  
PESD3V3L4UF  
PESD5V0L4UF  
PESD3V3L4UG  
PESD5V0L4UG  
PESD3V3L4UW  
PESD5V0L4UW  
SOT886  
SOT886  
SOT353  
SOT353  
SOT665  
SOT665  
-
MO-252  
leadless ultra small  
leadless ultra small  
very small  
-
MO-252  
SC-88A  
-
-
-
-
SC-88A  
very small  
-
-
ultra small and flat lead  
ultra small and flat lead  
1.2 Features  
I ESD protection of up to four lines  
I Low diode capacitance  
I Ultra low leakage current: IRM = 5 nA  
I ESD protection up to 20 kV  
I Max. peak pulse power: PPP = 30 W  
I Low clamping voltage: VCL = 12 V  
I IEC 61000-4-2; level 4 (ESD)  
I IEC 61000-4-5 (surge); IPP = 2.5 A  
1.3 Applications  
I Computers and peripherals  
I Audio and video equipment  
I Cellular handsets and accessories  
I Communication systems  
I Portable electronics  
I Subscriber Identity Module (SIM) card  
protection  
 
 
 
 

PESD5V0L4UW,115 替代型号

型号 品牌 替代类型 描述 数据表
PESD5V0L4UW NXP

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