NZQA6V8AXV5T1G

更新时间： 2024-09-25 06:00:35

品牌	Logo	应用领域
安森美 - ONSEMI		瞬态抑制器二极管测试光电二极管 PC 局域网
页数	文件大小	规格书
5页	148K
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Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage

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NZQA6V8AXV5T1G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	R-PDSO-F5
针数：	5	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
Factory Lead Time：	2 weeks	风险等级：	1.31
Samacsys Confidence：	3	Samacsys Status：	Released
Samacsys PartID：	226974	Samacsys Pin Count：	5
Samacsys Part Category：	Diode	Samacsys Package Category：	SO Transistor Flat Lead
Samacsys Footprint Name：	SOT-553 CASE 463B ISSUE B	Samacsys Released Date：	2015-09-07 10:48:31
Is Samacsys：	N	最大击穿电压：	7.14 V
最小击穿电压：	6.47 V	击穿电压标称值：	6.8 V
最大钳位电压：	13 V	配置：	COMMON ANODE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-PDSO-F5	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	20 W
元件数量：	4	端子数量：	5
最高工作温度：	150 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL	最大功率耗散：	0.38 W
认证状态：	Not Qualified	参考标准：	IEC-61000-4-2
最大重复峰值反向电压：	4.3 V	最大反向电流：	1 µA
反向测试电压：	4.3 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子面层：	Tin (Sn)	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

NZQA6V8AXV5T1G 数据手册

NZQA5V6AXV5 Series

Transient Voltage Suppressors

ESD Protection Diode with Low Clamping

Voltage

This integrated transient voltage suppressor device (TVS) is

designed for applications requiring transient overvoltage protection. It

is intended for use in sensitive equipment such as computers, printers,

business machines, communication systems, medical equipment, and

other applications. Its integrated design provides very effective and

reliable protection for four separate lines using only one package.

These devices are ideal for situations where board space is at a premium.

Features

• Low Clamping Voltage

• Small SOT−553 SMT Package

• Stand Off Voltage: 3 V

• Low Leakage Current

http://onsemi.com

• Four Separate Unidirectional Configurations for Protection

• ESD Protection: IEC61000−4−2: Level 4 ESD Protection

MILSTD 883C − Method 3015−6: Class 3

• Complies to USB 1.1 Low Speed & Full Speed Specifications

SOT−553

CASE 463B

PLASTIC

• These are Pb−Free Devices

Benefits

• Provides Protection for ESD Industry Standards: IEC 61000, HBM

• Protects Four Lines Against Transient Voltage Conditions

• Minimize Power Consumption of the System

MARKING DIAGRAM

• Minimize PCB Board Space

Typical Applications

• Instrumentation Equipment

• Serial and Parallel Ports

xx M G

• Microprocessor Based Equipment

• Notebooks, Desktops, Servers

• Cellular and Portable Equipment

= Device Code

= Date Code*

= Pb−Free Package

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

(Note: Microdot may be in either location)

Characteristic

Symbol

Value

Unit

Peak Power Dissipation (Note 1)

Steady State Power − 1 Diode (Note 2)

380

ORDERING INFORMATION

Thermal Resistance,

Junction−to−Ambient

Above 25°C, Derate

327

3.05

°C/W

mW/°C

†

Device

Package

Shipping

NZQA5V6AXV5T1

SOT−553* 4000/Tape & Reel

Maximum Junction Temperature

150

°C

Jmax

NZQA5V6AXV5T1G SOT−553* 4000/Tape & Reel

NZQA6V8AXV5T1 SOT−553* 4000/Tape & Reel

NZQA6V8AXV5T1G SOT−553* 4000/Tape & Reel

Operating Junction and Storage

Temperature Range

T T

−55 to

+150

stg

Lead Solder Temperature (10 seconds

duration)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Non−repetitive current per Figure 5.

NZQA6V8AXV5T3

SOT−553* 16000/Tape & Reel

NZQA6V8AXV5T3G SOT−553* 16000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

2. Only 1 diode under power. For all 4 diodes under power, P will be 25%.

Mounted on FR−4 board with min pad.

See Application Note AND8308/D for further description of

survivability specs.

*This package is inherently Pb−Free.

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

September, 2009 − Rev. 7

NZQA5V6AXV5/D

12 3 4 5

中文翻译

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NZQA6V8AXV5T1G 替代型号

型号	品牌	替代类型	描述	数据表
NZQA6V8AXV5T2G	ONSEMI	类似代替	Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage
NZQA6V8AXV5T3G	ONSEMI	类似代替	Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage
NZQA6V8XV5T1G	ONSEMI	类似代替	Quad Array for ESD Protection

与NZQA6V8AXV5T1G相关器件

型号	品牌	获取价格	描述	数据表
NZQA6V8AXV5T2G	ONSEMI	获取价格	Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage
NZQA6V8AXV5T3	ONSEMI	获取价格	Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage
NZQA6V8AXV5T3G	ONSEMI	获取价格	Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage
NZQA6V8XV5T1	ONSEMI	获取价格	Quad Array for ESD Protection
NZQA6V8XV5T1G	ONSEMI	获取价格	Quad Array for ESD Protection
NZQA6V8XV5T2	ONSEMI	获取价格	Transient Voltage Suppressor, Quad Array, SOT-553, 5 LEAD, 4000-REEL
NZT44H8	FAIRCHILD	获取价格	NPN Power Amplifier
NZT44H8	ONSEMI	获取价格	NPN功率放大器
NZT44H8_NL	FAIRCHILD	获取价格	Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
NZT44H8D84Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

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