是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.78 | 最大集电极电流 (IC): | 0.1 A |
最小直流电流增益 (hFE): | 100 | 元件数量: | 1 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.5 W |
子类别: | BIP General Purpose Small Signal | 表面贴装: | NO |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PDTC115TT | NXP |
获取价格 |
Low VCEsat (BISS) transistors | |
PDTC115TT | NEXPERIA |
获取价格 |
NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = openProduction | |
PDTC115TU | NXP |
获取价格 |
Low VCEsat (BISS) transistors | |
PDTC115TU | NEXPERIA |
获取价格 |
NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = openProduction | |
PDTC115TU,115 | NXP |
获取价格 |
PDTC115T series - NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open SC-70 3-Pin | |
PDTC123 | NXP |
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NPN resistor-equipped transistor | |
PDTC123E | NXP |
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NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm | |
PDTC123EE | NXP |
获取价格 |
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm | |
PDTC123EE,115 | NXP |
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PDTC123E series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm SC-75 3- | |
PDTC123EEF | NXP |
获取价格 |
NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm |