5秒后页面跳转
PDTC115TU PDF预览

PDTC115TU

更新时间: 2024-11-26 04:10:51
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
12页 956K
描述
Low VCEsat (BISS) transistors

PDTC115TU 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.28
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PDTC115TU 数据手册

 浏览型号PDTC115TU的Datasheet PDF文件第2页浏览型号PDTC115TU的Datasheet PDF文件第3页浏览型号PDTC115TU的Datasheet PDF文件第4页浏览型号PDTC115TU的Datasheet PDF文件第5页浏览型号PDTC115TU的Datasheet PDF文件第6页浏览型号PDTC115TU的Datasheet PDF文件第7页 
Automotive small-signal  
discretes solutions  
Drive the future with our innovative portfolio  

与PDTC115TU相关器件

型号 品牌 获取价格 描述 数据表
PDTC115TU,115 NXP

获取价格

PDTC115T series - NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = open SC-70 3-Pin
PDTC123 NXP

获取价格

NPN resistor-equipped transistor
PDTC123E NXP

获取价格

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
PDTC123EE NXP

获取价格

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
PDTC123EE,115 NXP

获取价格

PDTC123E series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm SC-75 3-
PDTC123EEF NXP

获取价格

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
PDTC123EEF,115 NXP

获取价格

PDTC123EEF
PDTC123EK NXP

获取价格

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
PDTC123EM NXP

获取价格

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
PDTC123EM NEXPERIA

获取价格

NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmProduction