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PDTA115TT,215 PDF预览

PDTA115TT,215

更新时间: 2024-11-12 15:47:43
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
17页 93K
描述
PDTA115T series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open TO-236 3-Pin

PDTA115TT,215 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TO-236包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.39
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PDTA115TT,215 数据手册

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PDTA115T series  
PNP resistor-equipped transistors; R1 = 100 k, R2 = open  
Rev. 05 — 2 September 2009  
Product data sheet  
1. Product profile  
1.1 General description  
PNP resistor-equipped transistors.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
NPN complement  
JEITA  
SC-75  
SC-59  
SC-101  
SC-43A  
-
PDTA115TE  
PDTA115TK  
PDTA115TM  
PDTA115TS[1]  
PDTA115TT  
PDTA115TU  
SOT416  
SOT346  
SOT883  
SOT54 (TO-92)  
SOT23  
PDTC115TE  
PDTC115TK  
PDTC115TM  
PDTC115TS  
PDTC115TT  
PDTC115TU  
SOT323  
SC-70  
[1] Also available in SOT54A and SOT54 variant packages (see Section 2)  
1.2 Features  
I Built-in bias resistors  
I Reduces component count  
I Simplifies circuit design  
I Reduces pick and place costs  
1.3 Applications  
I General purpose switching and  
I Circuit drivers  
amplification  
I Inverter and interface circuits  
1.4 Quick reference data  
Table 2.  
Symbol  
VCEO  
IO  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
50  
Unit  
V
collector-emitter voltage  
output current (DC)  
bias resistor 1 (input)  
open base  
-
-
-
-
100  
130  
mA  
kΩ  
R1  
70  
100  
 
 
 
 
 
 

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