是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SC-75 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.11 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 21 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PDTA123JK | NXP |
获取价格 |
NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM | |
PDTA123JM | NXP |
获取价格 |
NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM | |
PDTA123JM | NEXPERIA |
获取价格 |
PNP resistor-equipped transistors; R1 = 2.2 k | |
PDTA123JM,315 | NXP |
获取价格 |
PDTA123J series - PNP resistor-equipped trans | |
PDTA123JMB | NEXPERIA |
获取价格 |
PNP resistor-equipped transistor; R1 = 2.2 kΩ | |
PDTA123JQA | NEXPERIA |
获取价格 |
50 V, 100 mA PNP resistor-equipped transistorsProduction | |
PDTA123JQB-Q | NEXPERIA |
获取价格 |
50 V, 100 mA PNP resistor-equipped transistorsProduction | |
PDTA123JQC | NEXPERIA |
获取价格 |
50 V, 100 mA PNP resistor-equipped transistorsProduction | |
PDTA123JQC-Q | NEXPERIA |
获取价格 |
50 V, 100 mA PNP resistor-equipped transistorsProduction | |
PDTA123JS | NXP |
获取价格 |
NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM |