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PDTA123JET/R PDF预览

PDTA123JET/R

更新时间: 2024-09-24 13:00:55
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
14页 151K
描述
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP General Purpose Small Signal

PDTA123JET/R 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-75包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.11
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 21最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PDTA123JET/R 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
PDTA123E series  
PNP resistor-equipped transistors;  
R1 = 2.2 kΩ, R2 = 2.2 kΩ  
Product data sheet  
2004 Aug 02  
Supersedes data of 2004 Apr 07  

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