是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.56 |
Samacsys Confidence: | 3 | Samacsys Status: | Released |
Samacsys PartID: | 170772 | Samacsys Pin Count: | 3 |
Samacsys Part Category: | Integrated Circuit | Samacsys Package Category: | SOT23 (3-Pin) |
Samacsys Footprint Name: | SOT23 (TO-236AB) | Samacsys Released Date: | 2015-04-13 16:49:26 |
Is Samacsys: | N | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PDTA123ET,215 | NXP |
获取价格 |
PDTA123E series - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm TO-236 3 | |
PDTA123EU | NXP |
获取价格 |
PNP resistor-equipped transistors | |
PDTA123EU | PHILIPS |
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Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon | |
PDTA123EU | NEXPERIA |
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PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmProduction | |
PDTA123EU-Q | NEXPERIA |
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PNP resistor-equipped transistor; R1 = 2.2 kΩ | |
PDTA123J | NXP |
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PNP resistor-equipped transistors; R1 = 2.2 k | |
PDTA123JE | NXP |
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PNP resistor-equipped transistor | |
PDTA123JEF | NXP |
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PNP resistor-equipped transistor | |
PDTA123JEF,115 | NXP |
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100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-89, 3 PIN | |
PDTA123JEFT/R | NXP |
获取价格 |
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-89, 3 PIN, BIP Gene |