是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-PBCC-N3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.62 |
Is Samacsys: | N | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 30 | JESD-30 代码: | R-PBCC-N3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PDTA123EM,315 | NXP |
获取价格 |
PDTA123E series - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm DFN 3-Pi | |
PDTA123EMB | NXP |
获取价格 |
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA | |
PDTA123EMB | NEXPERIA |
获取价格 |
PNP resistor-equipped transistor; R1 = 2.2 kΩ | |
PDTA123ES | NXP |
获取价格 |
PNP resistor-equipped transistors | |
PDTA123ET | NXP |
获取价格 |
PNP resistor-equipped transistor | |
PDTA123ET | NEXPERIA |
获取价格 |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmProduction | |
PDTA123ET,215 | NXP |
获取价格 |
PDTA123E series - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm TO-236 3 | |
PDTA123EU | NXP |
获取价格 |
PNP resistor-equipped transistors | |
PDTA123EU | PHILIPS |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon | |
PDTA123EU | NEXPERIA |
获取价格 |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhmProduction |