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PDTA123EU-Q PDF预览

PDTA123EU-Q

更新时间: 2024-11-13 17:01:35
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
7页 177K
描述
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩProduction

PDTA123EU-Q 数据手册

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PDTA123EU-Q  
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ  
1 March 2024  
Product data sheet  
1. General description  
PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device  
(SMD) plastic package.  
NPN complement: PDTC123EU  
2. Features and benefits  
Built-in bias resistors  
Simplifies circuit design  
Reduces component count  
Reduces pick and place costs  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
General purpose switching and amplification  
Inverter and interface circuits  
Circuit driver  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-50  
V
IO  
output current  
-
-
-100  
2.86  
1.2  
mA  
kΩ  
R1  
bias resistor 1 (input)  
bias resistor ratio  
Tamb = 25 °C  
1.54  
0.8  
2.2  
1
R2/R1  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
Simplified outline  
Graphic symbol  
3
I
input (base)  
O
2
G
O
GND (emitter)  
output (collector)  
R1  
I
3
R2  
GND  
1
2
sym003  
SC-70 (SOT323)  
 
 
 
 
 

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