Datasheet > PDTA123EU-Q

PDTA123EU-Q

更新时间： 2024-11-13 17:01:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	177K
描述
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩProduction

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PDTA123EU-Q 数据手册

PDTA123EU-Q

PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1 March 2024

Product data sheet

1. General description

PNP Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device

(SMD) plastic package.

NPN complement: PDTC123EU

2. Features and benefits

•

Built-in bias resistors

•

Simplifies circuit design

Reduces component count

Reduces pick and place costs

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General purpose switching and amplification

Inverter and interface circuits

Circuit driver

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-50

I_O

output current

-100

2.86

1.2

kΩ

bias resistor 1 (input)

bias resistor ratio

T_amb= 25 °C

1.54

0.8

2.2

R2/R1

5. Pinning information

Table 2. Pinning information

Symbol

Description

Simplified outline

Graphic symbol

input (base)

GND (emitter)

output (collector)

GND

sym003

SC-70 (SOT323)

12 3 4 5 6 7

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