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PBSS5360X PDF预览

PBSS5360X

更新时间: 2024-11-15 11:13:47
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
12页 230K
描述
60 V, 3 A PNP low VCEsat (BISS) transistorProduction

PBSS5360X 数据手册

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PBSS5360X  
60 V, 3 A PNP low VCEsat (BISS) transistor  
3 July 2017  
Product data sheet  
1. General description  
PNP low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62)  
flat lead Surface-Mounted Device (SMD) plastic package.  
NPN complement: PBSS4360X  
2. Features and benefits  
Low collector-emitter saturation voltage VCEsat  
High collector current capability IC and ICM  
High energy efficiency due to less heat generation  
AEC-Q101 qualified  
3. Applications  
DC-to-DC conversion  
Supply line switches  
Battery charger  
LCD backlighting  
Driver in low supply voltage applications (e.g. lamps and LEDs)  
Inductive load driver (e.g. relays, buzzers and motors)  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-60  
V
IC  
collector current  
-
-
-
-
-
-
-3  
A
ICM  
peak collector current single pulse; tp ≤ 1 ms  
-6  
A
RCEsat  
collector-emitter  
IC = -2 A; IB = -200 mA; Tamb = 25 °C  
[1]  
225  
mΩ  
saturation resistance  
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02  
 
 
 
 
 

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