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PBSS5540Z PDF预览

PBSS5540Z

更新时间: 2024-11-15 11:15:11
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
9页 233K
描述
40 V low VCEsat PNP transistorProduction

PBSS5540Z 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SC-73, 4 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.71
外壳连接:COLLECTOR最大集电极电流 (IC):5 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):250JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP参考标准:IEC-60134
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

PBSS5540Z 数据手册

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PBSS5540Z  
40 V low VCEsat PNP transistor  
1 April 2023  
Product data sheet  
1. General description  
PNP low VCEsat transistor in a SOT223 plastic package.  
NPN complement: PBSS4540Z  
2. Features and benefits  
Low collector-emitter saturation voltage  
High current capability  
Improved device reliability due to reduced heat generation.  
3. Applications  
Supply line switching circuits  
Battery management applications  
DC/DC converter applications  
Strobe flash units  
Heavy duty battery powered equipment (motor and lamp drivers)  
MOSFET driver applications.  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-40  
V
IC  
collector current  
-
-
-
-
-5  
A
ICM  
peak collector current single pulse; tp ≤ 1 ms  
-
-10  
80  
A
RCEsat  
collector-emitter  
IC = -2 A; IB = -200 mA; pulsed; tp ≤  
55  
mΩ  
saturation resistance  
300 µs; δ ≤ 0.02; Tamb = 25 °C  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
base  
Simplified outline  
Graphic symbol  
B
C
E
C
4
C
E
2
collector  
emitter  
B
3
1
2
3
4
collector  
sym132  
SC-73 (SOT223)  
 
 
 
 
 

PBSS5540Z 替代型号

型号 品牌 替代类型 描述 数据表
PBSS5540Z,115 NXP

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