Datasheet > PBSS8110T-Q

PBSS8110T-Q

更新时间： 2024-11-06 11:13:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	276K
描述
100 V, 1 A NPN low VCEsat transistorProduction

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PBSS8110T-Q 数据手册

PBSS8110T-Q

100 V, 1 A NPN low VCEsat transistor

13 May 2022

Product data sheet

1. General description

NPN low V_CEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

PNP complement: PBSS9110T-Q

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High collector current capability: I_Cand I_CM

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Major application segments

•

Automotive 42 V power

Telecom infrastructure

Industrial

•

Power management

•

DC/DC converters

Supply line switching

Battery charger

LCD backlighting

Peripheral drivers

•

Driver in low supply voltage applications (e.g. lamps and LEDs)

Inductive load driver (e.g. relays, buzzers and motors)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

100

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

saturation resistance

I_C= 1 A; I_B= 100 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

165

200

mΩ

12 3 4 5 6 7...13

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